Simulation of an diode using the built in parameters

I would like to understand the built in parameters for the diode in Spice simulation.

There are many to choose from and I was hoping someone could help me with a quick explanation. I suspect most of them can be left untouched for a ballpark simulation.

What are the settings if I want to simulate:

  1. A standard diode (with a forward voltage drop of 0.7V)
  2. An ideal diode (no voltage drop or resistance)
  3. A rectified mosfet (with Rds_on of 2mOhm)

many thanks!
/Jonas

The parameters of all those basic models are described in the ngSpice manual. In general, a model specification for a diode is just a single line of text with those parameters, and they’re easy to modify.

Just search 1N4148 or 1N4007 (depending what you understand as standard) diode model at their manufacturers websites.

  1. Use standard settings of diode in library Simulation_SPICE.
  2. change dc parameters: n from 1 to 0.001 and rs to small value (zero may or may not generate convergence issues).
  3. NMOS device from Simulation_SPICE with VDMOS model: change kp, rd and rb.
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Thank you all! Appreciated

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